Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures | Zendy

D. C. Look | Zendy; Yanbo He | Zendy; J. Ramdani | Zendy; N. A. El-Masry | Zendy; S. M. Bedair | Zendy

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Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

Author(s) -

D. C. Look,

Yanbo He,

J. Ramdani,

N. A. El-Masry,

S. M. Bedair

Publication year - 1993

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.109781

Subject(s) - electrical resistivity and conductivity , molecular beam epitaxy , epitaxy , materials science , activation energy , annealing (glass) , optoelectronics , low energy , analytical chemistry (journal) , chemistry , atomic physics , nanotechnology , metallurgy , physics , layer (electronics) , chromatography , quantum mechanics

InxGa1−xP lattice matched to GaAs (x≂0.51) has proven to be useful in many device applications. Here we show that undoped, semi‐insulating InGaP is possible by growing with gas source molecular beam epitaxy at very low temperatures, 150–250 °C. The material grown at about 200 °C is n‐type with a 296‐K resistivity of 9×105 Ω cm, a mobility of 120 cm2/V s, and a donor activity energy of 0.48 eV. When annealed at 600 °C for 1 h, the resistivity increases to greater than 109 Ω cm and the resistivity activation energy to 0.8 eV.

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