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Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence
Author(s) -
Robert B. Lee,
Kerry J. Vahala,
Chung-En Zah,
R. Bhat
Publication year - 1993
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.109381
Subject(s) - ambipolar diffusion , cathodoluminescence , diffusion , quantum well , indium , condensed matter physics , mole fraction , analytical chemistry (journal) , materials science , selenium , chemistry , physics , thermodynamics , optics , optoelectronics , electron , metallurgy , laser , chromatography , quantum mechanics , luminescence
The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole fractions in the interval 0.3

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