Photoluminescence and electro-optic properties of small (25–35 nm diameter) quantum boxes | Zendy

L. Davis | Zendy; K. K. Ko | Zendy; W.-Q. Li | Zendy; H.C. Sun | Zendy; Y.L. Lam | Zendy; T. Brock | Zendy; S. W. Pang | Zendy; P. Bhattacharya | Zendy; M. J. Rooks | Zendy

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Photoluminescence and electro-optic properties of small (25–35 nm diameter) quantum boxes

Author(s) -

L. Davis,

K. K. Ko,

W.-Q. Li,

H.C. Sun,

Y.L. Lam,

T. Brock,

S. W. Pang,

P. Bhattacharya,

M. J. Rooks

Publication year - 1993

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.109254

Subject(s) - photoluminescence , luminescence , electron beam lithography , materials science , optoelectronics , molecular beam epitaxy , quantum efficiency , quantum well , dry etching , optics , blueshift , epitaxy , etching (microfabrication) , nanotechnology , resist , physics , laser , layer (electronics)

The luminescence and electro‐optic properties of buried 25–35 nm quantum boxes have been measured. The quantum boxes were defined by a combination of molecular beam epitaxial growth and regrowth, electron beam lithography, and dry etching. The photoluminescence from 35 nm boxes shows a blue shift of ∼15 meV compared to the bulk luminescence and an enhancement, taking into account the fill factor. An enhanced effective linear electro‐optic coefficient, rl, is observed for the quantum boxes

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