Open AccessSymmetric self-electro-optic effect device array grown by metalorganic vapor phase epitaxy using GaAs/Al0.04Ga0.96As shallow quantum wells
Author(s) -
S. W. Lee,
T. M. Kim,
K. U. Chu,
S. Park,
Mun Seok Jeong,
O’D. Kwon
Publication year - 1993
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.108777
Subject(s) - metalorganic vapour phase epitaxy , quantum well , epitaxy , optoelectronics , vapor phase , absorption (acoustics) , gallium arsenide , materials science , chemistry , analytical chemistry (journal) , optics , nanotechnology , laser , physics , chromatography , layer (electronics) , composite material , thermodynamics
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