Application of scanning electron acoustic microscopy to the characterization of n-type and semi-insulating GaAs | Zendy

Bianchi Méndez | Zendy; Javier Piqueras | Zendy

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Application of scanning electron acoustic microscopy to the characterization of n-type and semi-insulating GaAs

Author(s) -

Bianchi Méndez,

Javier Piqueras

Publication year - 1992

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.107485

Subject(s) - scanning electron microscope , characterization (materials science) , materials science , wafer , electrical resistivity and conductivity , doping , acoustic microscopy , gallium arsenide , optoelectronics , signal (programming language) , electron microscope , electron , microscopy , nanotechnology , composite material , optics , electrical engineering , physics , engineering , computer science , programming language , quantum mechanics

A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs as compared with n-type material. The SEAM signal generation mechanisms in GaAs are discussed

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