Open AccessErratum: ‘‘Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane’’ [Appl. Phys. Lett. 60, 489 (1992)]
Author(s) -
Shigefusa F. Chichibu,
A. Iwai,
Satoru Matsumoto,
Hirofumi Higuchi
Publication year - 1992
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.107447
Subject(s) - chemical vapor deposition , silane , doping , deposition (geology) , materials science , chemistry , analytical chemistry (journal) , optoelectronics , organic chemistry , paleontology , sediment , biology
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