Raman study of disorder and strain in epitaxial ZnSxSe1−x films on a GaAs substrate | Zendy

Yoshihiko Kanemitsu | Zendy; Aishi Yamamoto | Zendy; Hitoshi Matsue | Zendy; Yasuaki Masumoto | Zendy; Shigeki Yamaga | Zendy; Akihiko Yoshikawa | Zendy

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Raman study of disorder and strain in epitaxial ZnSxSe1−x films on a GaAs substrate

Author(s) -

Yoshihiko Kanemitsu,

Aishi Yamamoto,

Hitoshi Matsue,

Yasuaki Masumoto,

Shigeki Yamaga,

Akihiko Yoshikawa

Publication year - 1992

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.107333

Subject(s) - raman spectroscopy , phonon , condensed matter physics , epitaxy , materials science , laser linewidth , heterojunction , gallium arsenide , semiconductor , lattice (music) , optoelectronics , optics , nanotechnology , physics , laser , layer (electronics) , acoustics

Quantitative characterization of disorder and strain in ZnSxSe1−x/GaAs lattice-mismatched semiconductor heterostructures was successfully done by means of Raman spectroscopy. The alloy disorder and the phonon coherence length in epitaxial ZnSxSe1−x films were estimated from the Raman linewidth of the ZnSe-like LO phonon by using a spatial correlation model. The strain due to the lattice mismatch near the interface between ZnSxSe1−x and GaAs was deduced from the linewidth of the GaAs LO phonon

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