Optical time-of-flight measurement of carrier transport in GaAs/AlxGa1−xAs and In0.53Ga0.47As/In0.52Al0.48As multiquantum wells | Zendy

Sandeep Gupta | Zendy; L. Davis | Zendy; P. Bhattacharya | Zendy

Open Access

Optical time-of-flight measurement of carrier transport in GaAs/AlxGa1−xAs and In0.53Ga0.47As/In0.52Al0.48As multiquantum wells

Author(s) -

Sandeep Gupta,

L. Davis,

P. Bhattacharya

Publication year - 1992

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.107269

Subject(s) - quantum well , heterojunction , gallium arsenide , optoelectronics , perpendicular , x ray absorption spectroscopy , semiconductor , materials science , semiconductor materials , photoluminescence , chemistry , optics , absorption spectroscopy , physics , laser , geometry , mathematics

An all‐optical time‐of‐flight technique is used for measuring perpendicular carrier transport in semiconductor heterostructures and multiquantum wells (MQWs). This technique is based on measuring a change in surface reflectance due to the absorption nonlinearities induced by the carriers, and has a temporal resolution of ∼1 ps. Typical results on a GaAs/AlxGa1−xAs MQW and an In0.53Ga0.47As/In0.52Al0.48As MQW are compared. The observed fast transport times can only be explained by a field‐dependent carrier emission out of the quantum well, after which transport through the continuum states can occur. Due to larger barriers in the In0.53Ga0.47As/In0.52Al0.48As system, this intrinsic limit to transport is much larger, and hence these devices are observed to be slower than their GaAs/AlxGa1−xAs counterparts

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research