Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices | Zendy

Yoshihito Maeda | Zendy; Nobuo Tsukamoto | Zendy; Y. Yazawa | Zendy; Yoshihiko Kanemitsu | Zendy; Yasuaki Masumoto | Zendy

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Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices

Author(s) -

Yoshihito Maeda,

Nobuo Tsukamoto,

Y. Yazawa,

Yoshihiko Kanemitsu,

Yasuaki Masumoto

Publication year - 1991

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.105773

Subject(s) - photoluminescence , materials science , raman spectroscopy , luminescence , spectroscopy , electron , analytical chemistry (journal) , scanning electron microscope , optoelectronics , optics , chemistry , physics , chromatography , quantum mechanics , composite material

Ge microcrystals embedded in SiO2 glassy matrices were formed by a radio-frequency magnetron cosputtering technique and then annealed at 800 °C for 30 min. The average radius of the Ge microcrystals in SiO2 was determined to be about 3 nm by means of Raman spectroscopy and high resolution electron microscope. The annealed sample showed a strong room temperature luminescence with a peak at 2.18 eV. This is consistent with quantum confinement of electrons and holes

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