Open AccessLiquid-metal-mediated homoepitaxial film growth of Ge at low temperature
Author(s) -
Fulin Xiong,
Eric Ganz,
A. G. Loeser,
J. A. Golovchenko,
F. Spaepen
Publication year - 1991
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.105640
Subject(s) - materials science , eutectic system , transmission electron microscopy , layer (electronics) , precipitation , substrate (aquarium) , chemical vapor deposition , atmospheric temperature range , crystal growth , crystallography , phase (matter) , germanium , analytical chemistry (journal) , alloy , nanotechnology , chemistry , metallurgy , silicon , physics , chromatography , oceanography , organic chemistry , meteorology , geology
We demonstrate liquid‐metal‐mediated homoepitaxial crystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto the substrate by the vapor‐liquid‐solid mechanism. The liquid‐metal phase at the interface is a Au‐Ge alloy formed by initial deposition of a thin Au layer above the eutectic temperature. Ge vapor is provided by a molecular‐beam evaporator. The resulting films revealed high‐crystalline quality by in situ high‐energy ion scattering and channeling analysis and ex situ by cross‐sectional transmission electron microscopy.
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