Picosecond absorption dynamics of photoexcited InGaP epitaxial films | Zendy

P. Thiagarajan | Zendy; J. Schmerge | Zendy; Carmen S. Mei | Zendy; M. Marconi | Zendy; Oscar E. Martínez | Zendy; J. J. Rocca | Zendy; M. J. Hafich | Zendy; H. Y. Lee | Zendy; G. Y. Robinson | Zendy

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Picosecond absorption dynamics of photoexcited InGaP epitaxial films

Author(s) -

P. Thiagarajan,

J. Schmerge,

Carmen S. Mei,

M. Marconi,

Oscar E. Martínez,

J. J. Rocca,

M. J. Hafich,

H. Y. Lee,

G. Y. Robinson

Publication year - 1991

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.105533

Subject(s) - ambipolar diffusion , picosecond , diffusion , absorption (acoustics) , materials science , epitaxy , attenuation coefficient , fick's laws of diffusion , atmospheric temperature range , analytical chemistry (journal) , laser , optoelectronics , molecular physics , optics , atomic physics , chemistry , plasma , nanotechnology , physics , thermodynamics , layer (electronics) , quantum mechanics , chromatography , composite material , meteorology

The absorption recovery of a photoexcited InGaP epitaxial film 0.4 μm thick was investigated using the pump‐probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300–50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D≳2.8 cm2/s and a surface recombination velocity of S≳4×105 cm/s at room temperature.

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