Enhanced annealing kinetics in ion-implanted InxAl1−xAs studied by x-ray diffractometry | Zendy

Roy Clarke | Zendy; Waldemar Dos Passos | Zendy; YiJen Chan | Zendy; Dimitris Pavlidis | Zendy

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Enhanced annealing kinetics in ion-implanted InxAl1−xAs studied by x-ray diffractometry

Author(s) -

Roy Clarke,

Waldemar Dos Passos,

YiJen Chan,

Dimitris Pavlidis

Publication year - 1991

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.104895

Subject(s) - annealing (glass) , ion implantation , materials science , diffraction , x ray absorption spectroscopy , ion , x ray crystallography , kinetics , crystallography , perpendicular , analytical chemistry (journal) , condensed matter physics , absorption spectroscopy , chemistry , optics , metallurgy , physics , geometry , organic chemistry , mathematics , chromatography , quantum mechanics

We report a rapid thermal annealing (RTA) enhancement of the structural coherence of Si‐implanted InxAl1−xAs (x≊0.54) layers on (100)InP. Under these annealing conditions (750 °C for 30 s), the enhancement occurs only in implanted samples and is characterized by the appearance of pendellösung fringes in double‐crystal x‐ray diffraction. Measurements of the parallel (ϵ∥) and perpendicular (ϵ⊥) lattice mismatch show a slight relaxation in ϵ⊥ during RTA without significant generation of dislocations (ϵ∥=0). The results suggest an electronic mechanism for the increased efficiency of RTA in implanted samples

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