Local distribution of deep centers in GaP studied by infrared cathodoluminescence | Zendy

F. Domı́nguez-Adame | Zendy; J. Piqueras | Zendy; Paloma Fernández | Zendy

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Local distribution of deep centers in GaP studied by infrared cathodoluminescence

Author(s) -

F. Domı́nguez-Adame,

J. Piqueras,

Paloma Fernández

Publication year - 1991

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.104681

Subject(s) - cathodoluminescence , infrared , scanning electron microscope , materials science , infrared spectroscopy , infrared microscopy , optics , optoelectronics , chemistry , luminescence , physics , organic chemistry , composite material

Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image

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