Open AccessComment on ‘‘Transconductance degradation in silicon field-effect transistors resulting from inversion layer degeneracy’’
Author(s) -
G. Ghibaudo
Publication year - 1991
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.104672
Subject(s) - transconductance , silicon , degeneracy (biology) , transistor , materials science , degradation (telecommunications) , field effect transistor , inversion (geology) , optoelectronics , layer (electronics) , condensed matter physics , engineering physics , physics , nanotechnology , electronic engineering , engineering , geology , quantum mechanics , bioinformatics , paleontology , voltage , structural basin , biology
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