Electrical properties of hydrogenated diamond | Zendy

Sacharia Albin | Zendy; Linwood Watkins | Zendy

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Electrical properties of hydrogenated diamond

Author(s) -

Sacharia Albin,

Linwood Watkins

Publication year - 1990

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.102496

Subject(s) - diamond , materials science , passivation , hydrogen , material properties of diamond , conductivity , band gap , electrical resistivity and conductivity , crystallite , analytical chemistry (journal) , characterization (materials science) , deep level transient spectroscopy , optoelectronics , carbon fibers , nanotechnology , chemistry , composite material , silicon , metallurgy , organic chemistry , composite number , layer (electronics) , engineering , electrical engineering

Hydrogen passivation of deep traps in diamond is demonstrated. Current‐voltage (I‐V) characteristics of polycrystalline thin film and bulk diamond were studied before and after hydrogenation. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I‐V characteristics of the samples. The concentration of uncompensated traps was varied systematically by hydrogenation. The concentration of electrically active hydrogen was determined from the I‐V data. It is shown that hydrogenation is an alternative to deep‐level transient spectroscopy, suitable for characterization of traps in a wide‐band‐gap material like diamond.

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