Erratum: Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates [Appl. Phys. Lett.54, 1687 (1989)]
Author(s) -
J. B. Posthill
Publication year - 1989
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.102375
Subject(s) - sapphire , silicon on sapphire , characterization (materials science) , materials science , silicon , optoelectronics , condensed matter physics , nanotechnology , optics , physics , silicon on insulator , laser
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