Open AccessComment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett. 5 3, 495 (1988)]
Author(s) -
Michio Sato,
Yoshiji Horíkoshi
Publication year - 1989
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.102211
Subject(s) - chemical vapor deposition , monolayer , quantum well , materials science , condensed matter physics , metalorganic vapour phase epitaxy , gallium arsenide , chemistry , optoelectronics , epitaxy , layer (electronics) , nanotechnology , physics , optics , laser
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