Solid phase epitaxy of molecular beam deposited amorphous GaAs on Si | Zendy

Kiyohiko Yoshino | Zendy; Kouichi Murakami | Zendy; Shin Yokoyama | Zendy; Kohzoh Masuda | Zendy

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Solid phase epitaxy of molecular beam deposited amorphous GaAs on Si

Author(s) -

Kiyohiko Yoshino,

Kouichi Murakami,

Shin Yokoyama,

Kohzoh Masuda

Publication year - 1989

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.101050

Subject(s) - amorphous solid , materials science , epitaxy , molecular beam epitaxy , raman spectroscopy , irradiation , raman scattering , crystallization , analytical chemistry (journal) , laser , surface roughness , thin film , phase (matter) , optoelectronics , optics , crystallography , chemistry , nanotechnology , layer (electronics) , physics , organic chemistry , chromatography , nuclear physics , composite material

Solid phase epitaxial (SPE) crystallization of amorphous GaAs on (100) Si tilted by 4° toward <011> formed by molecular beam deposition (MBD) was first achieved by cw Kr laser irradiation for short durations. The ratio of As to Ga (y/x) in deposited amorphous GaxAsy films was varied from 0.4 to 1.2. During the laser irradiation, movement of the amorphous/crystalline interface was measured using time-resolved optical reflectivity (TROR). It was found from TROR and micro-Raman scattering measurements that hetero-SPE is attained in samples with As/Ga ratios ranging from 0.8 to 1.1 and that the interface roughness is larger than that observed in homo-SPE (e.g., MBD GaAs on GaAs and P+ ion-implanted GaAs)

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