Open AccessResponse to ‘‘Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’ ’’ [Appl. Phys. Lett. 5 4, 398 (1989)]
Author(s) -
W. B. Jackson,
C. C. Tsai,
M. Stutzmann
Publication year - 1989
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.100975
Subject(s) - kinetics , amorphous silicon , amorphous solid , silicon , materials science , thermodynamics , chemistry , crystallography , crystalline silicon , physics , optoelectronics , quantum mechanics
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