CHEMICAL VAPOR DEPOSITION OF TaSi2 AND WSi2 AT ATMOSPHERIC PRESSURE FROM IN SITU PREPARED METAL CHLORIDES | Zendy

E. Blanquet | Zendy; Constantin Vahlas | Zendy; C. Bérnard | Zendy; R. Madar | Zendy; J. Palleau | Zendy; J. Torrès | Zendy

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CHEMICAL VAPOR DEPOSITION OF TaSi₂ AND WSi₂ AT ATMOSPHERIC PRESSURE FROM IN SITU PREPARED METAL CHLORIDES

Author(s) -

E. Blanquet,

Constantin Vahlas,

C. Bérnard,

R. Madar,

J. Palleau,

J. Torrès

Publication year - 1989

Publication title -

le journal de physique colloques

Language(s) - English

Resource type - Journals

eISSN - 2777-3418

pISSN - 0449-1947

DOI - 10.1051/jphyscol:1989565

Subject(s) - chemical vapor deposition , ion , atmospheric pressure , deposition (geology) , metal , analytical chemistry (journal) , physics , chemistry , materials science , nanotechnology , meteorology , environmental chemistry , geology , metallurgy , paleontology , sediment , quantum mechanics

Optimum conditions for CVD of TaSi2 and WSi2 films were defined from thermodynamic calculations. These data were used as guidelines for the experimental investigation of the CVD of tantalum silicides at atmospheric pressure. The deposition process and the deposited films were found to be compatible with requirements for VLSI technology

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