Open AccessDegradation of hard MOS devices at low temperature
Author(s) -
N. Fourches
Publication year - 2002
Publication title -
journal de physique iv (proceedings)
Language(s) - English
Resource type - Journals
eISSN - 1764-7177
pISSN - 1155-4339
DOI - 10.1051/jp420020028
Subject(s) - annealing (glass) , oxide , materials science , threshold voltage , negative bias temperature instability , transistor , optoelectronics , analytical chemistry (journal) , voltage , chemistry , electrical engineering , composite material , chromatography , metallurgy , engineering
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