Open AccessLPCVD of SiC layers in a hot-wall reactor using TMS precursor
Author(s) -
F. Henry,
P. Marti,
Y. Casaux,
C. Combescure,
António Figueras,
V. Madigou,
R. Rodrı́guez-Clemente,
A. Mazel,
J. Sévely,
B. Armas
Publication year - 1993
Publication title -
journal de physique iv (proceedings)
Language(s) - English
Resource type - Journals
eISSN - 1764-7177
pISSN - 1155-4339
DOI - 10.1051/jp4:1993345
Subject(s) - chemical vapor deposition , materials science , nuclear engineering , chemical engineering , nanotechnology , engineering
Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) diluted in hydrogen as precursor. The morphology and the structure of the films were analyzed in terms of deposition temperature, total pressure in the reactor and TMS flow rate. The layers have been characterized using various techniques : SEM, X-ray diffraction and TEM (HREM and EELS)
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