Open AccessStrained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared laser applications
Author(s) -
D. K. Shih,
HaoHsiung Lin,
Yu-Chen Lin
Publication year - 2003
Publication title -
iee proceedings - optoelectronics
Language(s) - English
Resource type - Journals
eISSN - 1359-7078
pISSN - 1350-2433
DOI - 10.1049/ip-opt:20030389
Subject(s) - laser linewidth , molecular beam epitaxy , materials science , photoluminescence , laser , plasma , infrared , optoelectronics , quantum well , diffractometer , optics , epitaxy , layer (electronics) , nanotechnology , scanning electron microscope , physics , quantum mechanics , composite material
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