Coupling between microstrip lines embedded in polyimide layers for 3D-MMICs on Si | Zendy

George E. Ponchak | Zendy; Manos M. Tentzeris | Zendy; John Papapolymerou | Zendy

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Coupling between microstrip lines embedded in polyimide layers for 3D-MMICs on Si

Author(s) -

George E. Ponchak,

Manos M. Tentzeris,

John Papapolymerou

Publication year - 2003

Publication title -

iee proceedings - microwaves antennas and propagation

Language(s) - English

Resource type - Journals

eISSN - 1359-706X

pISSN - 1350-2417

DOI - 10.1049/ip-map:20030545

Subject(s) - microstrip , polyimide , electromagnetic shielding , microwave , materials science , coupling (piping) , optoelectronics , finite difference time domain method , footprint , integrated circuit , electric power transmission , transmission line , monolithic microwave integrated circuit , electronic circuit , wafer , electrical engineering , cmos , electronic engineering , engineering , physics , telecommunications , layer (electronics) , optics , amplifier , composite material , paleontology , biology

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si-SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.

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