Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation | Zendy

K. Huska | Zendy; G. Klatt | Zendy; J. Hetterich | Zendy; Ulf Geyer | Zendy; T. Dekorsy | Zendy; G. Bastian | Zendy; Uli Lemmer | Zendy

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Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation

Author(s) -

K. Huska,

G. Klatt,

J. Hetterich,

Ulf Geyer,

T. Dekorsy,

G. Bastian,

Uli Lemmer

Publication year - 2009

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2009.1648

Subject(s) - terahertz radiation , materials science , fabrication , optoelectronics , lithography , interference lithography , interference (communication) , voltage , directivity , evaporation , photoconductivity , biasing , optics , electrode , electrical engineering , antenna (radio) , physics , medicine , channel (broadcasting) , alternative medicine , pathology , thermodynamics , engineering , quantum mechanics

Interference-lithography and a self-aligning angle-evaporation technique are employed to fabricate interdigitated photoconductive terahertz (THz) emitters. The devices have a large active area for high directivity and submicron spaced electrodes for high internal electric fields at low bias voltages. The fabrication process offers the advantage that only one patterning step is needed to generate t...

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