GaAs0.7Sb0.3/GaAs type-II quantum-well laser with adjacent InAs quantum-dot layer
Author(s) -
You-Ru Lin,
Hao Lin,
Jing-Hong Chu
Publication year - 2009
Publication title -
electronics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2009.1243
Subject(s) - quantum dot , quantum dot laser , laser , optoelectronics , materials science , quantum well , layer (electronics) , gallium arsenide , active layer , semiconductor laser theory , optics , physics , semiconductor , nanotechnology , thin film transistor
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