CMOS low dropout linear regulator with single Miller capacitor
Author(s) -
WeiJen Huang,
ShuiShong Lu,
Shiqiang Liu
Publication year - 2006
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el:20064062
Subject(s) - low dropout regulator , cmos , bandgap voltage reference , linear regulator , dropout voltage , regulator , line regulation , capacitor , voltage regulator , materials science , voltage , electrical engineering , optoelectronics , electronic engineering , engineering , chemistry , biochemistry , gene
A 2-5V 150 mA CMOS low dropout (LDO) linear regulator with a single Miller capacitor of 4pF is presented. The proposed LDO regulator with a bandgap voltage reference has been fabricated in a 0.35 /spl mu/m CMOS process and the active chip area is 485/spl times/586 /spl mu/m. The maximum output current is 150 mA and the regulated output voltage is 1.8 V.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom