Suppressing phosphorus diffusion in germanium by carbon incorporation | Zendy

Guang-Li Luo | Zendy; C. C. Cheng | Zendy; ChenYu Huang | Zendy; S.L. Hsu | Zendy; Chao-Hsin Chien | Zendy; W.-X. Ni | Zendy; Chun–Yen Chang | Zendy

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Suppressing phosphorus diffusion in germanium by carbon incorporation

Author(s) -

Guang-Li Luo,

C. C. Cheng,

ChenYu Huang,

S.L. Hsu,

Chao-Hsin Chien,

W.-X. Ni,

Chun–Yen Chang

Publication year - 2005

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el:20052999

Subject(s) - germanium , annealing (glass) , phosphorus , materials science , mosfet , diffusion , doping , carbon fibers , optoelectronics , chemical engineering , analytical chemistry (journal) , chemistry , electrical engineering , transistor , silicon , metallurgy , environmental chemistry , thermodynamics , engineering , physics , composite material , voltage , composite number

A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

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