Open AccessMonolithic InGaP-GaAs HBT receiver front-end with 6 mW DC power consumption for 5 GHz band WLAN applications
Author(s) -
Kung-chia Yeh,
SheyShi Lu,
YoSheng Lin
Publication year - 2004
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el:20046513
Subject(s) - cascode , electrical engineering , heterojunction bipolar transistor , noise figure , rf front end , amplifier , radio frequency , port (circuit theory) , low noise amplifier , return loss , materials science , front and back ends , optoelectronics , engineering , transistor , cmos , antenna (radio) , voltage , bipolar junction transistor , mechanical engineering
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