InGaP∕InGaAs PHEMT with high IP3 for low noise applications | Zendy

YingTing Lin | Zendy; Edward Yi Chang | Zendy; G.-J. Chen | Zendy; H. M. Lee | Zendy; GuoWei Huang | Zendy; D. Biswas | Zendy; Chien-Hsin Chang | Zendy

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InGaP∕InGaAs PHEMT with high IP3 for low noise applications

Author(s) -

YingTing Lin,

Edward Yi Chang,

G.-J. Chen,

H. M. Lee,

GuoWei Huang,

D. Biswas,

Chien-Hsin Chang

Publication year - 2004

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el:20040458

Subject(s) - high electron mobility transistor , optoelectronics , materials science , schottky diode , indium gallium arsenide , gallium arsenide , noise (video) , transistor , linearity , schottky barrier , electrical engineering , engineering , computer science , diode , voltage , artificial intelligence , image (mathematics)

A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.

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