Open AccessLow threshold current density 1.3 [micro sign]m InAs∕InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
Author(s) -
Fu-Yu Chang,
J.D. Lee,
HaoHsiung Lin
Publication year - 2004
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el:20040127
Subject(s) - molecular beam epitaxy , cladding (metalworking) , optoelectronics , materials science , laser , quantum dot , quantum well , current density , gallium arsenide , quantum dot laser , semiconductor laser theory , epitaxy , optics , diode , nanotechnology , layer (electronics) , physics , quantum mechanics , metallurgy
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