High electron mobility in SiGe∕Si n-MODFET structures on sapphire substrates | Zendy

Carl H. Mueller | Zendy; E. T. Croke | Zendy; Samuel A. Alterovitz | Zendy

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High electron mobility in SiGe∕Si n-MODFET structures on sapphire substrates

Author(s) -

Carl H. Mueller,

E. T. Croke,

Samuel A. Alterovitz

Publication year - 2003

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el:20030871

Subject(s) - sapphire , electron mobility , materials science , induced high electron mobility transistor , high electron mobility transistor , optoelectronics , electron , field effect transistor , modulation (music) , electron density , transistor , fermi gas , condensed matter physics , physics , optics , laser , quantum mechanics , voltage , acoustics

For the first time, SiGe/Si n-modulation doped field effect transistor (n-MODFET) structures have been grown on sapphire substrates. A room temperature electron mobility value of 1271 cm2/V-s at an electron carrier density (ne) of 1.6×1012 cm-2 was obtained. At 250 mK, the mobility increases to 13 313 cm2/V-s (ne=1.33×1012 cm-2) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.

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