Open AccessCharacteristics of small-signal capacitances of silicon-on-sapphire MOSFETs
Author(s) -
F. Kong,
Y.T. Yeow,
H. Domyo
Publication year - 2003
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el:20030226
Subject(s) - silicon on sapphire , materials science , mosfet , sapphire , optoelectronics , silicon , signal (programming language) , capacitance , electrode , electrical engineering , silicon on insulator , transistor , voltage , physics , engineering , optics , computer science , laser , quantum mechanics , programming language
The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.Full Tex
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