Open AccessMD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing
Author(s) -
Jintong Wu,
Zongwei Xu,
Lei Liu,
Alexander Hartmaier,
Mathias Rommel,
K. Nordlund,
Tao Wang,
Rebecca Janisch,
J. Zhao
Publication year - 2021
Publication title -
journal of materials chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.899
H-Index - 128
eISSN - 2050-7534
pISSN - 2050-7526
DOI - 10.1039/d0tc05374k
Subject(s) - doping , materials science , annealing (glass) , ion , aluminium , ion implantation , optoelectronics , metallurgy , chemistry , organic chemistry
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