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Transmission electron microscopy characterization of low temperature boron doped silicon epitaxial films
Author(s) -
Guillaume Noircler,
Marta Chrostowski,
Melvyn Larranaga,
Etienne Drahi,
Pere Roca i Cabarrocas,
Patricia de Coux,
B. Warot-Fonrose
Publication year - 2020
Publication title -
crystengcomm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.813
H-Index - 132
ISSN - 1466-8033
DOI - 10.1039/d0ce00817f
Subject(s) - high resolution transmission electron microscopy , epitaxy , transmission electron microscopy , materials science , silicon , doping , annealing (glass) , characterization (materials science) , optoelectronics , scanning transmission electron microscopy , electron microscope , nanotechnology , optics , composite material , layer (electronics) , physics

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