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High mobility transistors based on electrospray-printed small-molecule/polymer semiconducting blends
Author(s) -
Charalampos Pitsalidis,
AnnaMaria Pappa,
Simon Hunter,
A. Laskarakis,
T. Kaimakamis,
Marcia M. Payne,
John E. Anthony,
Thomas D. Anthopoulos,
S. Logothetidis
Publication year - 2016
Publication title -
journal of materials chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.899
H-Index - 128
eISSN - 2050-7534
pISSN - 2050-7526
DOI - 10.1039/c6tc00238b
Subject(s) - materials science , fabrication , electrospray , polymer , molecule , transistor , small molecule , nanotechnology , printed electronics , optoelectronics , mass spectrometry , inkwell , composite material , organic chemistry , chromatography , electrical engineering , chemistry , voltage , biology , genetics , engineering , medicine , alternative medicine , pathology
Spray-coating techniques have recently emerged as especially effective approaches for the deposition of small semiconducting molecules toward the fabrication of organic field-effect transistors (OFETs). Despite the promising mobility values and the industrial implementation capability of such techniques, the resultant devices still face challenges in terms of morphology control and performance variation. In this work, the efficient process control of electrostatic spraying deposition (ESD) and the excellent film forming properties of polymer:small molecule blends were successfully combined to develop reliable and high performance transistors. Specifically, a highly efficient blended system of 2,8-difluoro-5,11-bis(triethylsilylethynyl)-anthradithiophene (diF-TES-ADT) and poly(triarylamine) (PTAA) was employed in order to realize top-gate OFETs under ambient conditions, both on rigid and on flexible substrates. The films revealed extensive crystallization and microstructural organization implying distinct phase separation in the electrosprayed blend. Furthermore, we investigated the effect of processing temperature on film continuity and the presence of grain boundaries. Remarkably, the electrosprayed OFETs exhibited field-effect mobilities as high as 1.7 cm2 V−1 s−1 and enhanced performance consistency when compared to conventional gas-sprayed transistors. Additionally, the transistors showed excellent electrical and environmental stability, indicative of the good interface quality and the self-encapsulation capability of the top-gate structure. These results highlight the great potential of electrohydrodynamic atomization techniques for implementation in large-area processing for OFET fabrication.

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