Open AccessCarrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy
Author(s) -
Palak Dugar,
Mahesh Kumar,
Shibin Krishna T. C.,
Neha Aggarwal,
Govind Gupta
Publication year - 2015
Publication title -
rsc advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.746
H-Index - 148
ISSN - 2046-2069
DOI - 10.1039/c5ra10877b
Subject(s) - picosecond , ultrafast laser spectroscopy , ultrashort pulse , epitaxy , materials science , relaxation (psychology) , spectroscopy , absorption (acoustics) , transient (computer programming) , optoelectronics , absorption spectroscopy , molecular physics , chemistry , optics , nanotechnology , physics , laser , psychology , social psychology , layer (electronics) , quantum mechanics , computer science , composite material , operating system
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