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Quasi-intrinsic colossal permittivity in Nb and In co-doped rutile TiO2nanoceramics synthesized through a oxalate chemical-solution route combined with spark plasma sintering
Author(s) -
HyukSu Han,
Pascal Dufour,
Sungwook Mhin,
Jeong Ho Ryu,
Christophe Tenailleau,
Sophie GuillemetFritsch
Publication year - 2015
Publication title -
physical chemistry chemical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.053
H-Index - 239
eISSN - 1463-9084
pISSN - 1463-9076
DOI - 10.1039/c5cp02653a
Subject(s) - materials science , spark plasma sintering , x ray photoelectron spectroscopy , rutile , analytical chemistry (journal) , dielectric spectroscopy , raman spectroscopy , fourier transform infrared spectroscopy , oxalate , chemical engineering , ceramic , inorganic chemistry , chemistry , composite material , optics , engineering , physics , electrode , chromatography , electrochemistry
Nb and In co-doped rutile TiO2 nanoceramics (n-NITO) were successfully synthesized through a chemical-solution route combined with a low temperature spark plasma sintering (SPS) technique. The particle morphology and the microstructure of n-NITO compounds were nanometric in size. Various techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG)/differential thermal analysis (DTA), Fourier transform infrared (FTIR), and Raman spectroscopy were used for the structural and compositional characterization of the synthesized compound. The results indicated that the as-synthesized n-NITO oxalate as well as sintered ceramic have a co-doped single phase of titanyl oxalate and rutile TiO2, respectively. Broadband impedance spectroscopy revealed that novel colossal permittivity (CP) was achieved in n-NITO ceramics exhibiting excellent temperature-frequency stable CP (up to 10(4)) as well as low dielectric loss (∼5%). Most importantly, detailed impedance data analyses of n-NITO compared to microcrystalline NITO (μ-NITO) demonstrated that the origin of CP in NITO bulk nanoceramics might be related with the pinned electrons in defect clusters and not to extrinsic interfacial effects.

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