300 mm Wafer-level, ultra-dense arrays of Au-capped nanopillars with sub-10 nm gaps as reliable SERS substrates | Zendy

Jiaqi Li | Zendy; Chang Chen | Zendy; Hilde Jans | Zendy; XiuMei Xu | Zendy; Niels Verellen | Zendy; Ingrid Vos | Zendy; Yasuaki Okumura | Zendy; V. V. Moshchalkov | Zendy; Liesbet Lagae | Zendy; Pol Van Dorpe | Zendy

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300 mm Wafer-level, ultra-dense arrays of Au-capped nanopillars with sub-10 nm gaps as reliable SERS substrates

Author(s) -

Jiaqi Li,

Chang Chen,

Hilde Jans,

XiuMei Xu,

Niels Verellen,

Ingrid Vos,

Yasuaki Okumura,

V. V. Moshchalkov,

Liesbet Lagae,

Pol Van Dorpe

Publication year - 2014

Publication title -

nanoscale

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.038

H-Index - 224

eISSN - 2040-3372

pISSN - 2040-3364

DOI - 10.1039/c4nr04315d

Subject(s) - nanopillar , materials science , wafer , nanosphere lithography , reproducibility , raman spectroscopy , optoelectronics , fabrication , nanotechnology , lithography , nanostructure , optics , chemistry , chromatography , medicine , alternative medicine , physics , pathology

The 193 nm deep UV immersion lithography is leveraged to fabricate highly dense and uniform arrays of Au-capped Si nanopillars on a 300 mm wafer level, and the substrates are applied in surface enhanced Raman spectroscopy for reliable molecule detection. Due to the sub-10 nm gap sizes and ultra-high array density with the lattice constant less than 100 nm, our nanopillar based substrates outperform the current commercial products in terms of the signal intensity, reproducibility and fabrication scale.

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