Open AccessFacile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands
Author(s) -
Mukesh Kumar,
Syed Khalid Pasha,
T. C. Shibin Krishna,
Avanish Pratap Singh,
Pawan Kumar,
Bipin Kumar Gupta,
Govind Gupta
Publication year - 2014
Publication title -
dalton transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.98
H-Index - 184
eISSN - 1477-9234
pISSN - 1477-9226
DOI - 10.1039/c4dt01191k
Subject(s) - photoluminescence , triangular prism , spectroscopy , materials science , prism , nano , nanotechnology , chemical engineering , optoelectronics , crystallography , chemistry , optics , physics , composite material , engineering , quantum mechanics
We report a strategy for fabrication of 3D triangular GaN nano prism islands (TGNPI) grown on Ga/Si(553) substrate at low temperature by N2(+) ions implantation using a sputtering gun technique. The annealing of Ga/Si(553) (600 °C) followed by nitridation (2 keV) shows the formation of high quality GaN TGNPI cross-section. TGNPI morphology has been confirmed by atomic force microscopy. Furthermore, these nano prism islands exhibit prominent ultra-violet luminescence peaking at 366 nm upon 325 nm excitation wavelength along with a low intensity yellow luminescence broad peak at 545 nm which characterizes low defects density TGNPI. Furthermore, the time-resolved spectroscopy of luminescent TGNPI in nanoseconds holds promise for its futuristic application in next generation UV-based sensors as well as many portable optoelectronic devices.
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