Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion model | Zendy

Sang Woon Lee | Zendy; Jaeyeong Heo | Zendy; Roy G. Gordon | Zendy

Open Access

Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion model

Author(s) -

Sang Woon Lee,

Jaeyeong Heo,

Roy G. Gordon

Publication year - 2013

Publication title -

nanoscale

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.038

H-Index - 224

eISSN - 2040-3372

pISSN - 2040-3364

DOI - 10.1039/c3nr03082b

Subject(s) - atomic layer deposition , heterojunction , materials science , diffusion , amorphous solid , deposition (geology) , layer (electronics) , oxygen , electron , diffusion barrier , chemical physics , electron density , nanotechnology , chemistry , optoelectronics , crystallography , physics , thermodynamics , paleontology , organic chemistry , quantum mechanics , sediment , biology

Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al₂O₃/SrTiO₃ (STO) heterostructures, in which the amorphous Al₂O₃ layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al₂O₃/STO heterostructures above the critical thickness of Al₂O₃ is explained by an oxygen diffusion mechanism.

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