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Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al₂O₃/SrTiO₃ (STO) heterostructures, in which the amorphous Al₂O₃ layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al₂O₃/STO heterostructures above the critical thickness of Al₂O₃ is explained by an oxygen diffusion mechanism.

Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion model