Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires | Zendy

Yongsheng Xu | Zendy; Binbin Yao | Zendy; Dan Liu | Zendy; Weiwei Lei | Zendy; Pinwen Zhu | Zendy; Qiliang Cui | Zendy; Guangtian Zou | Zendy

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Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires

Author(s) -

Yongsheng Xu,

Binbin Yao,

Dan Liu,

Weiwei Lei,

Pinwen Zhu,

Qiliang Cui,

Guangtian Zou

Publication year - 2013

Publication title -

crystengcomm

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.813

H-Index - 132

ISSN - 1466-8033

DOI - 10.1039/c3ce26920e

Subject(s) - ferromagnetism , materials science , nanowire , coercivity , magnetic semiconductor , condensed matter physics , doping , semiconductor , saturation (graph theory) , vacancy defect , nanotechnology , optoelectronics , physics , mathematics , combinatorics

Room-temperature ferromagnetism has been observed in Mg-doped AlN (AlN:Mg) nanowires. The saturation magnetization and the coercivity of the AlN:Mg nanowires are about 0.051 emu g-1 and 127 Oe, respectively. The Al vacancy and substitutional Mg could play very important roles in room temperature ferromagnetism. These findings confirmed the room temperature ferromagnetism in diluted magnetic semiconductor AlN:Mg nanowires by doping with the nonmagnetic element Mg. © 2013 This journal isThe Royal Society of Chemistry.

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