A fluorenone based low band gap solution processable copolymer for air stable and high mobility organic field effect transistors | Zendy

Prashant Sonar | Zendy; TaeJun Ha | Zendy; Ananth Dodabalapur | Zendy

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A fluorenone based low band gap solution processable copolymer for air stable and high mobility organic field effect transistors

Author(s) -

Prashant Sonar,

TaeJun Ha,

Ananth Dodabalapur

Publication year - 2012

Publication title -

chemical communications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.837

H-Index - 333

eISSN - 1364-548X

pISSN - 1359-7345

DOI - 10.1039/c2cc37131f

Subject(s) - fluorenone , materials science , copolymer , organic semiconductor , transistor , moiety , thin film transistor , furan , band gap , electron mobility , optoelectronics , polymer chemistry , polymer , field effect transistor , semiconductor , layer (electronics) , fluorene , organic chemistry , nanotechnology , chemistry , composite material , electrical engineering , voltage , engineering

A fluorenone based alternating copolymer () with a furan based fused aromatic moiety has been designed and synthesized. exhibits a small band gap with a lower HOMO value. Testing this polymer semiconductor as the active layer in organic thin-film transistors results in hole mobilities as high as 0.15 cm(2) V(-1) s(-1) in air.

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