Electronic structure of superlattices of graphene and hexagonal boron nitride | Zendy

T. P. Kaloni | Zendy; Yingchun Cheng | Zendy; Udo Schwingenschlögl | Zendy

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Electronic structure of superlattices of graphene and hexagonal boron nitride

Author(s) -

T. P. Kaloni,

Yingchun Cheng,

Udo Schwingenschlögl

Publication year - 2011

Publication title -

journal of materials chemistry

Language(s) - English

Resource type - Journals

eISSN - 1364-5501

pISSN - 0959-9428

DOI - 10.1039/c1jm14895h

Subject(s) - graphene , superlattice , materials science , electronic structure , condensed matter physics , band gap , ab initio , oxide , boron nitride , semiconductor , bilayer graphene , electronic band structure , nanotechnology , optoelectronics , chemistry , physics , organic chemistry , metallurgy

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors

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