Using a double-doping strategy to prepare a bilayer device architecture for high-efficiency red PhOLEDs | Zendy

Ming-Tzu Kao | Zendy; WenYi Hung | Zendy; Zhen-Han Tsai | Zendy; Hong-Wei You | Zendy; HsiaoFan Chen | Zendy; Yün Chi | Zendy; KenTsung Wong | Zendy

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Using a double-doping strategy to prepare a bilayer device architecture for high-efficiency red PhOLEDs

Author(s) -

Ming-Tzu Kao,

WenYi Hung,

Zhen-Han Tsai,

Hong-Wei You,

HsiaoFan Chen,

Yün Chi,

KenTsung Wong

Publication year - 2010

Publication title -

journal of materials chemistry

Language(s) - English

Resource type - Journals

eISSN - 1364-5501

pISSN - 0959-9428

DOI - 10.1039/c0jm02992k

Subject(s) - common emitter , doping , phosphorescence , bilayer , optoelectronics , materials science , quantum efficiency , brightness , electrical efficiency , electron , layer (electronics) , nanotechnology , power (physics) , optics , chemistry , physics , fluorescence , membrane , quantum mechanics , biochemistry

A simple, bilayered, red phosphorescent organic light-emitting device featuring a doubly-doped emitting layer comprising of the novel hole-transporting host DTAF, the electron-transporting host 27SFBI, and the emitter Os(bpftz)2(PPhMe2)2 covering the interfacial region provides an unusually high current of ca. 1560 mA cm−2 at 8.5 V, a maximum brightness of 32 700 cd m−2, external quantum efficiencies as high as 12.3% (10.9% at 1000 cd m−2), and a power efficiency of 13.5 lm W−1. This concise device architecture is very cost-effective and competitive for practical applications.

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