Open AccessHexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy
Author(s) -
Yong-Jin Cho,
Alex Summerfield,
Andrew J. Davies,
Tin S. Cheng,
Emily F. Smith,
Christopher J. Mellor,
Andrei N. Khlobystov,
C. T. Foxon,
L. Eaves,
Peter H. Beton,
С. В. Новиков
Publication year - 2016
Publication title -
scientific reports
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.24
H-Index - 213
ISSN - 2045-2322
DOI - 10.1038/srep34474
Subject(s) - materials science , graphite , molecular beam epitaxy , raman spectroscopy , epitaxy , boron nitride , x ray photoelectron spectroscopy , substrate (aquarium) , atomic force microscopy , microscopy , layer (electronics) , hexagonal boron nitride , optoelectronics , analytical chemistry (journal) , nanotechnology , crystallography , graphene , chemistry , optics , chemical engineering , composite material , oceanography , physics , engineering , geology , chromatography
We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp 2 -bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.
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