Determination of the Exciton Binding Energy in CdSe Quantum Dots
Author(s) -
Robert W. Meulenberg,
Jonathan R. I. Lee,
Abraham Wolcott,
Jin Z. Zhang,
L. J. Terminello,
T. van Buuren
Publication year - 2009
Publication title -
acs nano
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.554
H-Index - 382
eISSN - 1936-086X
pISSN - 1936-0851
DOI - 10.1021/nn8006916
Subject(s) - exciton , binding energy , quantum dot , spectroscopy , materials science , band gap , biexciton , conduction band , condensed matter physics , valence (chemistry) , valence band , absorption spectroscopy , absorption edge , molecular physics , atomic physics , physics , nanotechnology , optics , quantum mechanics , electron
The exciton binding energy (EBE) in CdSe quantum dots (QDs) has been determined using X-ray spectroscopy. Using X-ray absorption and photoemission spectroscopy, the conduction band (CB) and valence band (VB) edge shifts as a function of particle size have been determined and combined to obtain the true band gap of the QDs (i.e., without an exciton). These values can be compared to the excitonic gap obtained using optical spectroscopy to determine the EBE. The experimental EBE results are compared with theoretical calculations on the EBE and show excellent agreement.
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