Preferential Syntheses of Semiconducting Vertically Aligned Single-Walled Carbon Nanotubes for Direct Use in FETs | Zendy

Liangti Qu | Zendy; Feng Du | Zendy; Liming Dai | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Preferential Syntheses of Semiconducting Vertically Aligned Single-Walled Carbon Nanotubes for Direct Use in FETs

Author(s) -

Liangti Qu,

Feng Du,

Liming Dai

Publication year - 2008

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/nl800967n

Subject(s) - carbon nanotube , materials science , chemical vapor deposition , raman spectroscopy , plasma enhanced chemical vapor deposition , nanotechnology , yield (engineering) , carbon fibers , chemical engineering , optoelectronics , composite material , physics , engineering , composite number , optics

We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research