Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces | Zendy

Takeaki Yajima | Zendy; Makoto Minohara | Zendy; Christopher Bell | Zendy; Hiroshi Kumigashira | Zendy; Masaharu Oshima | Zendy; Harold Y. Hwang | Zendy; Yasuyuki Hikita | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Enhanced Electrical Transparency by Ultrathin LaAlO₃ Insertion at Oxide Metal/Semiconductor Heterointerfaces

Author(s) -

Takeaki Yajima,

Makoto Minohara,

Christopher Bell,

Hiroshi Kumigashira,

Masaharu Oshima,

Harold Y. Hwang,

Yasuyuki Hikita

Publication year - 2015

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/nl504169m

Subject(s) - heterojunction , materials science , semiconductor , electric field , optoelectronics , band offset , oxide , polar , insulator (electricity) , optical transparency , band gap , valence band , physics , quantum mechanics , astronomy , metallurgy

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research