Open AccessSegregation of In to Dislocations in InGaN
Author(s) -
Matthew K. Horton,
Sneha Rhode,
S.L. Sahonta,
Menno J. Kappers,
Sarah J. Haigh,
Timothy J. Pennycook,
C. J. Humphreys,
Rajiv O. Dusane,
M. A. Moram
Publication year - 2015
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/nl5036513
Subject(s) - materials science , dislocation , thin film , alloy , spectroscopy , condensed matter physics , strain (injury) , optoelectronics , crystallography , nanotechnology , composite material , chemistry , physics , quantum mechanics , medicine
Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa(1-x)N alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.
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